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基于EPG技术的棉蚜抗性指标筛选

来源：花匠小妙招时间：2025-10-28 03:12

摘要： 本文以研究不同抗性水平的棉花材料上棉蚜的取食行为及与其生长发育的关系，筛选可作为棉花抗蚜鉴定指标的刺探电位图谱（Electrical penetration graph，EPG）参数为目的。采用生物测定的方法比较了棉蚜在不同棉花品种上的生长发育参数，利用EPG技术对不同抗性水平棉花上棉蚜的取食行为进行分析，并对生长发育参数与主要的EPG参数进行相关性分析。棉蚜室内生测结果表明，棉蚜在4种高抗品种（辽5632-642、TYJ-98-6、锦454和中G5）上的存活率、产仔数、内禀增长率均较中抗和高感品种低。EPG监测结果显示，在高抗品种上，Np波总次数与总时间均显著高于其他品种，第1次刺探时间靠后且持续时间长，C波和E2波总时间较短，F波和E1波总时间长且次数多；在中抗品种中棉所49（CCRI 49）、中棉所79（CCRI 79）和雷克斯（光叶）上，F波总次数和总时间均较低；在中抗品种非洲E-40和高感品种辽棉6号上，Np波总次数与总时间均低于其他品种，C波总时间与E2波总时间长。结果表明抗性棉花材料对棉蚜生长发育有不利的影响，Np波总次数、E1波总次数、第1次刺探出现时间等5个EPG参数与棉花的抗性存在显著相关性。可见，Np波总次数、E1波总次数、第1次刺探出现时间等EPG参数可初步作为棉花对蚜虫是否具有抗性的鉴定指标，研究结果为棉花抗蚜性鉴定方法提供重要的理论依据和技术支撑。

关键词: 棉蚜, 抗虫性, 刺探电位图谱(EPG), 生长发育, 抗蚜参数

Abstract: The feeding behaviors of Aphis gossypii on cotton germplasms of different resistance levels were associated with the growth and development of the insects.The electrical penetration graph (EPG)-based parameters for measuring cotton resistance to the insect were screened.The growth and development parameters of A.gossypii on different cotton varieties were compared by bioassay.The feeding behaviors of A.gossypii on cotton germplasms of different resistance levels was analyzed using the EPG technique,and the correlation between growth and development parameters and main EPG parameters was analyzed.The bioassay results showed that the survival rate,number of offspring and intrinsic rate of increase of A.gossypii on four highly resistant germplasms were lower than those on germplasms of moderate resistance and high susceptibility.The results of EPG monitoring showed,on the highly resistant germplasms Liao 5632-642,TYJ-98-6,Jin 454 and zhong G5,the total number and total duration of Np waves were obviously higher than those on the other germplasms,time to the 1st probe was later and duration of the 1st probe was longer,the total duration of C and E2 waves was shorter,and the total duration of F and E1 waves was longer and the total number of them was greater.On the moderately resistant germplasms,CCRI 49,CCRI 79 and Rex (light leaf),the total duration and total number of F waves were lower.On the moderately resistant germplasm Africa E-40 and the highly susceptible germplasm Liaomian 6,the total duration and the total number of Np waves were lower than those on the other varieties,and the total duration of C and E2 waves were longer.The results showed that the resistant cotton materials had an adverse effect on the growth and development of A.gossypii.The five EPG parameters,such as the total number of Np waves,the total number of E1 waves,and the time to the 1st probe (min),were significantly correlated with cotton resistance level.It can be seen that the five EPG parameters,such as the total number of Np waves can be used as an indicator of whether a cotton germplasm harbors resistance to A.gossypii,providing an important theoretical basis and technical support for cotton resistance identification.

Key words: Aphis gossypii, insect resistance, electrical penetration graph (EPG), growth and development, aphis-resistance parameter

中图分类号:

S476